| Part Numbert | Mfg | Packt | D/C | Descriptiont | Qty | Company/Contact | |
| TPS76427DBVRG4 | TI | SOT23-5 | 08+ | 3000 |
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TPS76427DBVRG4 Datasheet DESCRIPTION The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors Vcc for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the number ofwrite cycles that can be executed and no additional support circuitry is required for microprocessor interfacing. TPS76427DBVRG4 Price
TPS76427DBVRG4 on stock 6.2.1 Program Memory The program memory of the P8xC557E4 consists of 32 Kbytes ROM respectively FEEPROM ("Flash Memory") on-chip, externally expandable up t0 64 Kbytes. If, during RESET, the EA pin was held HIGH, the P8xC557E4 executes out of the internal program memory unless the address exceeds 7FFFH. Locations 8000H through OFFFFH are then fetched from the external program memory. If the EA pin was held LOW during RESET the P8xC557E4 fetches all instructions from the external program memory. The EA input is latched during RESET and is don't care after RESET.
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