TPS76727QPWPG4 Datasheet Notes: 1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type. 2. Typical values are at VCC = 5.OV, TA = 250C ambient and maximum loading. 3. Not more than one output should be shorted at one time. Duration ofthe test should not exceed one second. 4. Measured by the voltage drop between A and B pin at indicated current through the switch. On-Resistance is determined by the lower ofthe voltages on the two (A,B) pins. 5. This parameter is determined by device characterization but is not production tested. TPS76727QPWPG4 Price| Parameter | Symbol | Value | Unit | | Drain-source voltage | VDS | 1 2 | V | | Continuos drain current | D | 25 | mA | | Gate l/gate 2 peak source current | +/G1/2SM | 1 0 | | Gate l (external biasing) | +VGISE | 3 | V | | Total power dissipation, Ts " 76 0CO | Ptot | 200 | mW | | Storage temperature | Tstq | -55+150 | aC | | Channel temperature | Tch | 1 50 | | | | |
TPS76727QPWPG4 on stock| Collector Cut off Current | ICBO | VCB=160V, IE=O | | | 1 00 | uA | | Emitter Cut off Current | IEBO | VEB=5V, lC=O | 3.0 | mA | | Collector Emitter Voltage | VCEO | IC=30mA, lB=O | 1 50 | V | | DC Current Gain | hFE | IC=6A, VCE=4V | 2.0 | 20 | K | | IC=10A, VCE=4V | 1.0 | K | | Collector Emitter Saturation Voltage | VCE(Sat) | IC=6A, IB=6mA | 2.5 | V | | Base Emitter Saturation Voltage | VBE(Sat) | IC=6A, IB=6mA | 3.0 | V | | Dvnamic Characteristics | | Transition Frequency | ft | VCE=12V, IC=1A, | 80 | MHz | | Collector Output Capacitance | Cob | VCB=10V, IE=O f=lMHz | 85 | pF | | | | | | | |
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