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TPS76D301PWP Datasheet

Parameter Symbol Conditions Values Unit
min typ. max
Characteristics
Transconductance gfs VDS>2'/D*RDS(on)max /D=4.6A 4 s
Input capacitance Ciss VGS=OV, VDS=25V, 970 pF
Output capacitance Coss 1MHz 370
Reverse transfer capacitance Crss 1 0
Effective output capacitance,3) energy related Co(er) VG S=OV, VDS=OV t0 480V 30 pF
Effective output capacitance,4) time related Co(tr) 55
Turn-on delay time td(on) VDD=350V, VGS=OIl OV, 1 20 ns
Rise time 0 /D=7.3A, RG=12Q 40
Turn-off delay time td(off) 1 70 255
Fall time tf 20 30


TPS76D301PWP Price
among /CS going low and /WE going low: A write ends at the earliest transition among /CS going high and /WE going high. tWP iS measured from the beginning of write to the end of write. tcw is measured from the later of /CS going low to the end of write . tAS iS measured from the address valid to the beginning of write. tWR iS measured from the end of write to the address change. tWR is applied in case a write ends as /CS or /WE going high. If /OE and /WE are in the read mode during this period, and the l/0 pins are in the output low-Z state, input of opposite phase of the output must not be applied because bus contention can occur.
TPS76D301PWP on stock
The crystal oscillatoris tuned by varying the trimming capaci- tor C20. The drift of the RF frequency is the same as the drift of crystal frequency when measured in ppm. The total differ- ence in ppm, Af(ppm), between the tuned RF frequency and the drifted frequency is given by: Af(ppm) = ST X AT + n x At where:

Parameter Min Typ Max U nits Test Conditions
Is Continuous Source Current (Body Diode) 7.7 A MOSFET symbol n showing the
ISM Pulsed Source Current (Body Diode) 0i 31 integral reverse c p-n junction diode.
VSD Diode Forward Voltage 1.6 V Tj=250C, ls=7.7A, VGS=OV
t rr Reverse Recovery Time 70 140 ns TJ=250C, IF=10A
Qrr Reverse Recovery Charge 0.20 0 40 LLC di/dt=lOOA/Us
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by LS+LD)