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TPSE687M010R0035 Datasheet

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Source to Drain Diode Voltage VSD ISD= 45A 1.5 V
Diode Reverse Recovery Time trr ISD = 45A, dISD/dt = 100A/as 125 ns


TPSE687M010R0035 Price
PROGRAM MEMORY Program Memory consists of a 2048-byte external memory (typically PROM). Words of this memory may be program instructions, constants or ROM addressing data. ROM addressing is accomplished by a ll-bit PC register which selects one of the 8-bit words contained in ROM. A new address is loaded into the PC register during each in- struction cycle. Unless the instruction is a transfer of control instruction, the PC register is loaded with the next sequen- tial ll-bit binary count value. Three levels of subroutine nesting are implemented by a three level deep stack. Each subroutine call or interrupt
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Peripheral Component Interconnect (PCI) compliant Preloadable output registers for testability Automatic register reset on power-up Cost-effective 24-pin plastic SKINNYDIP and 28-pin PLCC packages Extensive third-party software and programmer support through FusionPLD partners Fully tested for 100% programming and func- tional yields and high reliability Programmable output polarity 5-ns version utilizes a split leadframe for improved performance

7034S 7034L
Symbol Parameter Test Conditions Min Max Min Max Unit
Input Leakage Current0) Vcc = 5.5V, VIN = OV to Vcc 10 5 uA
IILOI Output Leakage Current CE = VIH, VOUT= OV to Vcc 10 5 uA
VOL Output Low Voltage IOL= 4mA O4 0.4 V
VOH Output High Voltage IOH= 4mA 2.4 2.4 V