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TPSY227M006R0200 Datasheet

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TPSY227M006R0200 Price

Parameters 31 DQ.. Units Conditions
VFM Max. Forward Voltage Drop 0 57 v @3A T= 25 0C
* See Fig. 1 (1) 0 71 V @6A
O51 V @3A
O62 V @6A Ti= 125 0C
IRM Max. Reverse Leakage Current 1 mA T= 25 0C
* See Fig. 2 (1) 20 mA Ti= 125 0C VR= rated VR
CT Typical Junction Capacitance 190 pF VR = 5VDC (test signal range 100Khz t0 1Mhz) 250C
Ls Typical Series Inductance 9 0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/lJs (Rated VR)


TPSY227M006R0200 on stock

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Input Offset Voltage Vl0 Tc = 25aC Tc = -55aC to +1250C +5 +40 mV uV/oC
Input Offset Voltage vs Supply Vl0 (VCC) +35 uVV
Input Offset Voltage vs Power Vl0 (P) +10 LiV/W
Input Bias Current IB+,|B Tc = 25aC Tc = -55aC to +1250C 05 20 nA n/VoC
Input Bias Current vs Supply lB (VCC) 02 nAN
Input Offset Current lIo Tc = 25aC Tc = -55aC to +1250C 01 3 nA n/VoC
Input Impendance RIN 250 MQ
Gain Bandwidth Product @1 MHz GB 1 MHz
Power Bandwidth PB Tc = 25aC, lo = 40VP_P, 10 = 8.OA 1 0 16 kHz
Phase Margin Im -55aC to +1250C 45 Degree
Common Mode Rejection Ratio CMRR VICM = +15V Tc = 25aC Tc = -55aC to +1250C 80 76 dB dB
Output Voltage VO VIN = 400 mVP_P square wave Vcc = +llV RL= 75Q, RCL = 0 +17 v
Output Voltage Swing VO VO Tc = 25aC, 10 =10A lo = 4A -55aC to +1250C +Vcc - 8V +Vcc - 6V V V
Open Loop Gain Av RL= 250Q, f = 10HZ 94 dB
Slew Rate @ 20% of Vo SR RL = 100C), RCL = 0 VIN = 40 VP_P square wave f = 1kHz, Vo = 40 VP_P 1.0 V/hr,S
Power Supply Vcc -55aC to +1250C +10 +36 +40 V
Quiescent Current IS Tc=25C 2.6 1 0 mA


Description: Powerex CIB Modules are designed for use in switching applications. Each module consists of a three phase diode converter section, a three phase IGBT inverter section and a brake section. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.