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Part Numbert	Mfg	Packt	D/C	Descriptiont	Qty	Company/Contact
TQ2-L2-9V	NAIS		07+	in stock	20000	Shenzhen KHS Electronics Co., .. Contact:Tony Tel:86-755-61306257 Fax: Email: tony@khsdz.cn
TQ2-L2-9V	NAIS		07+	in stock	20000	ShenZhen KHS Electronics Co.,L.. Contact:tony Tel:86-755-61306257 Fax:86-755-61306957 Email: tony@khsdz.cn
TQ2-L2-9V	ARM				50	Andes Trading Company (BJ) Contact:Helen Tel:86-10-62102448 Fax: Email: helen@andes-ic.com

TQ2-L2-9V Datasheet

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TQ2-L2-9V Price

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifi- cations mentioned in this publication are subject to change without notice. This publication supersedes and replaces all infor- mation previously supplied. STMicroelectronics products are not authorized for use as critical components in life support de- vices or systems without express written approval of STMicroelectronics. @ The ST logo is a trademark of STMicroelectronics
TQ2-L2-9V on stock

Collector-Emitter Voltage (G-E SHORT) VCES		600		Volts
Gate-Emitter Voltage VGES		+20		Volts
Collector Current lc		400		Amperes
Peak Collector Current ICM		800*		Amperes
Diode Forward Current IF		400		Amperes
Diode Forward Surge Current IFM		800*		Amperes
Power Dissipation Pd		1500		Watts
Max. Mounting Torque M6 Terminal Screws		26		in-lb
Max. Mounting Torque M6 Mounting Screws		26		in-lb
Module Weight (Typical)		400		Grams
V Isolation VRMS		2500		Volts
' Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj = 25 IC unless otherwise specified
Cha racteristics Symbol Test Conditions	Min	Typ	Max	Units
Collector-Cutoff Current ICES VCE = VCES,VGE = OV			1.0	mA
Gate Leakage Current IGES VGE = VGES, VCE = OV			0 5
Gate-Emitter Threshold Voltage VGE(th) lC = 40mA, VCE = 10V	4.5	6.0	7.5	Volts
Collector-Emitter Saturation Voltage VCE(sat) lC = 400A, VGE = 15V		2.1	2.8¨	Volts
lc = 400A, VGE = 15V, Ti = 150IC , J		2 15		Volts
Total Gate Charge QG VCC = 300V, lc = 400A, VGS = 15V		1200		nC
Diode Forward Voltage VFM IE = 400A, VGS = OV			2.8	Volts
" Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 1C unless otherwise specified
Cha racteristics Symbol Test Conditions	Min.	Typ.	Max.	Units
Input Capacitance Cies			40	nF
Output Capacitance Coes VGE = OV, VCE = iov f = 1MHz			14	nF
Reverse Transfer Capacitance Cres			8	nF
Resistive Turn-on Delay Time td(on)			350	ns
Load Rise Time tr VCC = 300V,lc = 400A,			600	ns
Switching Turn-off Delay Time td(off) VGEl = VGE2 = 15V, RG = 1.6 I			350	ns
Times FaIITime tf			300	ns
Diode Reverse Recovery Time trr IE = 400A, diE/dt = -800A/cs			110	ns
Diode Reverse Recovery Charge Qrr IE = 400A, diE/dt = -800A/os		1 08		c
Thermal and Mechanical Characteristics, Tj = 25 IC unless otherwise specified
Cha racteristics Symbol Test Conditions	Min.	Typ.	Max.	Units

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	l l l l l I I 1				1
1	a= -25 C' 11 1		~BI		JI
	7	J			25'C JOO;C t^
	(CE S			- ia:	l J I i -25-C	1
				25LC	I	1

				0.5 1 10 100200 COLLECTOR CURRENT:le (mA)	100	10

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