MOTMap-1  > TQ224ULCSAD

suppliers of TQ224ULCSAD and PDF data of TQ224ULCSAD

Part Numbert Mfg Packt D/C Descriptiont Qty Company/Contact  

TQ224ULCSAD Price

8 3ms Single H JEDEC Metho alf Sine-Wave j)
jj
-I


TQ224ULCSAD on stock
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any ques- tions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.

Total Device Dissipation Junction to Case Thermal Resistance Maximum Junction Temperature Storage Temperature DC Drain Current Drain to Gate Voltage Drain to Source Voltage Gate to Source Voltage
190 Watts 0.85 C/W 200 0C o o -65 -C t0 150-C 7.5 A 125V 125V 20V