TQ2EL29V Datasheet| Pin No. | Symbol | Function Description | | 43 | DVss | Ground for digital circuits | | 44 | CLK | Sampling clock | | 45 | DY8 | Y (luminance) digital input (LSB) | | 46 | DY7 | Y (luminance) digital input | | 47 | DY6 | Y (luminance) digital input | | 48 | DY5 | Y (luminance) digital input | | | |
TQ2EL29V Price| Item | S Ym bol | C onditions | R atiigs | U nits | | Storage T em perature | T stg | | 40125 | | | O peratmg Junction T em perature | T j | | 125 | | | M axim um R everse V oltage | V RM | | 60 | V | | R epetitive P eak Surge R everse V oltage | V HHS\1 | Pulse width 100m s, duty l/100 | lib | V | | A verage R ectified F orw ard C urrent | L | 50H z sine wave, R-load, Ratmg ~r each ann Io/3, T c=580C | 360 | A | | Peak Surge Forward Current | LSM | 50H z sine wave, N on-repetitive lcycle peak value, Ratmg ofper ann T t125 0C | 1600 | A | | M ountmg T orque | TOR | | 1.7 | N 'm | | | | | |
TQ2EL29V on stock| Part number | 203CMQ080 | 203CMQ100 | | VR Max. DC Reverse Voltage (V) | 80 | 100 | | VRWM Max. Working Peak Reverse Voltage (V) | | | |
| SYMBOL | PARAMETER | MIN | TYP | MAX | UNITS | TEST CONDITIONS | | Bvdss | Drain Breakdown Voltage | 65 | | | v | lds =120.00 mA, Vgs = OV | | ldss | Zero Bias Drain Current | | | 6.0 | mA | Vds = 28.OV, Vgs = OV | | lgss | Gate Leakage Current | | | 1 | uA | Vds = OV Vgs = 30V | | Vgs | Gate Bias for Drain Current | 1 | | 7 | v | lds = 0.60 A, Vgs = Vds | | gM | Forward Transconductance | | 7.2 | | Mho | Vds = 10V, Vgs = 5V | | Rdson | Saturation Resistance | | 0 16 | | Ohm | Vgs = 20V, lds q5.OOA | | ldsat | Saturation Current | | 42.00 | | Amp | Vgs = 20V, Vds = 10V | | Ciss | Common Source Input Capacitance | | 300.0 | | pF | Vds= 28.0 Vgs=OV, F=1MHz | | Crss | Common Source Feedback Capacitance | | 18.0 | | pF | Vds= 28.0 Vgs=OV, F=1MHz | | Coss | Common Source Output Capacitance | | 192.0 | | pF | Vds= 28.0 Vgs=OV, F=1MHz | | | | | | | |
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