| Mnemonic | Function |
| VCC | Power Supply Input 2.7 V t0 3.6 V. |
| V+ | Internally Generated Positive Supply, 7.25 V (6.5 V nominal for ADM3310E, ADM3315E). Capacitor C4 is connected between Vcc and V+. |
| V- | Internally Generated Positive Supply, -7.25 V (-6.5 V nominal for ADM3310E, ADM3315E). Capacitor C5 is connected between GND and V-. |
| GND | Ground Pin. Must be connected t0 0 V. |
| Cl+Cl- | External Capacitor l is connected between these pins. A 0.1 lrF capacitor is recommended, but larger capacitors up t0 1 lrF may be used. |
| C2+C2- | External Capacitor 2 is connected between these pins. A 0.1 IJF capacitor is recommended, but larger capacitors up t0 1 lrF may be used. |
| C3+C3- | External Capacitor 3 is connected between these pins. A 0.1 lrF capacitor is recommended, but larger capacitors up t0 1 lrF may be used. |
| TIN | Transmitter (Driver) Inputs. These inputs accept TTL/CMOS levels. An internal 400 kQ pull-up resistor to VcC is connected on each input. |
| TOUT | Transmitter (Driver) Outputs. Typically +5.5 V (+6.4 V for ADM3311E and ADM3312E) |
| RIN | Receiver Inputs. These inputs accept RS-232 signallevels. An internal 5 kQ pull-down resistor (22 kQ for ADM3315E) to GND is connected on each of these inputs. |
| ROUT | Receiver Outputs. These are TTUCMOS levels. |
| EN | Receiver Enable. A high level three-states all the receiver outputs. |
| SD | Shutdown Control. A high level disables the charge pump and reduces the quiescent current to less than l UA. All transmitters and most receivers are disabled. One receiver remains active in shutdown (two receivers active in shutdown for the ADM3310E). . ADM3307E ROUT3 active in shutdown . ADM3310E ROUT4 and ROUT5 active in shutdown . ADM3311E ROUT5 active in shutdown . ADM3312E ROUT3 active in shutdown . ADM3315E ROUT3 active in shutdown |
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Finally, you must use a utility program to write the binary ROM image to the necessary blocks on the memory card. AMD has a utility that works for the simple case of an SRAM memory card. Contact AMD for a copy of the utility (see the back page of this application note for information on how to contact AMD). This utility could be extended to support Flash memory cards with the addition of a Flash memory programming algorithm.
TQ2H-L-2M-12V on stock| Parameter | Symbol | Values | Unit |
| Reverse voltage | VR | 75 | V |
| Peak reverse voltage | VRM | 85 |
| Forward current | k | 200 | mA |
| Surge forward current, t = 1 c(s | IFS | 4.5 | A |
| Total power dissipation, Ts = 31 0C | Ptot | 330 | mW |
| Junction temperature | Tj | 1 50 | C |
| Storage temperature range | Tstg | - 65+150 |
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| FEATURES |
| Direct Replacement for SILICONIX U/SST440 & U/SST441 |
| HIGH CMRR | CMRR85dB |
| LOW GATE LEAKAGE | IGSS1pA |
| ABSOLUTE MAXIMUM RATINGS1 @ 25 aC (unless otherwise stated) |
| Maximum Temperatures |
| Storage Temperature | -65 to +150 aC |
| Operating Junction Temperature | -55 to +135 aC |
| Maximum Power Dissipation |
| Continuous Power Dissipation (Total) | 500mW |
| Maximum Currents |
| Gate Current | 50mA |
| Maximum Voltages |
| Gate to Drain | -25V |
| Gate to Source | -25V |
| Gate to Gate | +50V |
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