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TQ5320 Datasheet

DIMENSIONS
/-rr REF. Mimeters nches
UU A Min Typ. Max Min Typ. Max
C2 - L2L j Al A 4.30 2.49 4.60 2.69 0.169 0.098 0.181 0.106
- l
f 1 A2 0.03 0.23 0.001 0.009
C B 0.70 0.93 0.027 0.037
L < B2 1.25 1.40 0.048 0.055
L3 U C 0.45 0.60 0.017 0.024
f A1 C2 1.21 1.36 0.047 0.054
B2 j C R D 8.95 9.35 0.352 0.368
B E 10.00 10.28 0.393 0.405
G G 4.88 5.28 0.192 0.208
A2 --rr L 15.00 15.85 0.590 0.624
2mm min. L2 1.27 1.40 0.050 0.055
FLAT ZONE L3 1.40 1.75 0.055 0.069
:. R 0.40 0.016
i. V2 00 80 00 80


TQ5320 Price
The DIM1600FSM17-AOOO is a single switch 1700V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10.6 short circuit withstand. This module is optimised for traction drives and other applications requiring high thermal cycling capability.
TQ5320 on stock

SVmb Parameter Conditions Ratings U nit
IDC DC current Resistive load, Tc=114IC 20 A
IFSM Surge {non-repetitiveJ forward current One half c,/cle at 60Hz. peak value 400 A
12t 12t for fusing Value for one c\icle of surge current 6.7xl02 A2S
Ti Junction temperature -40+150 IC
Tstg Storage temperature -40+125 IC
Vis Isolation voltage Charged part to case 2500 V
0 981.47 N-m
Main terminal screw M4 1015 kg cm
Mounting torque 1 471.96 N-m
Mounting screw M5 1520 kg cm
Weight Typical value 90 g


VDD V SYMBOL TYP. MAX. TYPICAL EXTRAPOLATION FORMULA
Propagation delays In}On HIGH to LOW 5 10 15 tPHL 45 90 ns 20 40 ns 15 25 ns 18 ns + (0,55 ns/pF) CL 9 ns + (0,23 ns/pF) CL 7 ns + (0,16 ns/pF) CL
LOW to HIGH 5 10 15 tPLH 40 80 ns 20 40 ns 15 30 ns 13 ns + (0,55 ns/pF) CL 9 ns + (0,23 ns/pF) CL 7 ns + (0,16 ns/pF) CL
Output transition times HIGH to LOW 5 10 15 tTHL 60 120 ns 30 60 ns 20 40 ns 10 ns + (1,0 fis/pF) CL 9 ns + (0,42 ns/pF) CL 6 ns + (0,28 ns/pF) CL
LOW to HIGH 5 10 15 tTLH 60 120 ns 30 60 ns 20 40 ns 10 ns + (1,0 Tis/pF) CL 9 ns + (0,42 ns/pF) CL 6 ns + (0,28 ns/pF) CL