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TR3D336K020C0200 Datasheet
MOSFET Gate-to-Source Protection When using the adjustable version of the MIC5156, an external 16V zener diode placed from gate-to-source is recommended for MOSFET protection. All other versions of the Super LDO regulator controller use the internal gate-to- source clamp.
TR3D336K020C0200 Price

Parameter Min Typ. Max Units Conditions
V(BR)CES Collector-to-Emitter Breakdown Voltage 250 v VGE = OV, lC = 1mA
VCE(on) Collector-to-Emitter Voltage 1 3 1 6 VGE = 15V, lC = 400A
1 3 VGE = 15V, lC = 400A, TJ = 1250C
VGE(th) Gate Threshold Voltage 3 0 6 0 lc= 3.OmA
CVGE(th)/ZTJ Temperature Coeff. of Threshold Voltage -11 mV/oC VCE = VGE, lC = 2.5mA
gfe Forward Transconductance 371 S VCE = 25V, lc = 400A
ICES Collector-to-Emitter Leaking Current 0 50 mA VGE = OV, VCE = 250V
20 VGE = OV, VCE = 250V, TJ = 1250C
VFM Diode Forward Voltage - Maximum 1 7 2 2 V IF = 500A, VGE = OV
1 7 IF = 500A, VGE = OV, TJ = 1250C
IGES Gate-to-Emitter Leakage Current 500 nA VGE= +20V


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Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent dam- age to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Symbol Parameter Mfn Typ Max UnIts CondItIons
IDD VDD supply current 15 mA faK = 8MHz FDATA = 4MHz
IDDQ Ouiescent VDD supply current 100 uA All VIN= OV
IO(OFF) Off state output current 10 pA All outputs high All SWS parallel
IIH High-Ievel logic input current 1 pA VIH= 12V
IIL Low-Ievel logic input current 1 yA VIL= OV
VOH High-Ievel output data out VDD- 1.OV V l~ut = -100UA
VOL Low-Ievel output voltage HVOLJT 15.0 V IHVorn = +100mA
Data out 1.0 V IDout = +1 00piA
voc HVOUT Clamp Voltage -1.5 V IOL=- lOOmA