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TR502ST12 Datasheet

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rat ing only; functional operation of the device at these or any other conditions above those indicated in the operational sec- tion of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability
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AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed
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Parameter		Symbol	Test Conditions	Min	Typ	Max	Unit
Operating	Sequential Read	lccl	tRC=50ns, CE=ViL, IOUT=OmA		10	20
Current	Program	lcc2			10	20
Current	Erase	lcc3			10	20	mA
Stand-by Current(TTL)		ISB1	CE=ViH, WP=GND input (Pin #6) = OVcc			1	mA
Stand-by Current(CMOS)		ISB2	CE=Vcc-0.2, WP=GND input (Pin #6) = OVNcc		10	50
Input Leakage Current		h_l	VIN=O t0 3.6V			±10	uA
Output Leakage Current		ILO	VOUT=O t0 3.6V			±10	uA
Input High Voltage		VIH		2 0		Vcc+0.3	V
Input Low Voltage, All inputs		VIL		-0.3		0.8
Output High Voltage Level		VOH	IOH=-40011A	2 4
Output Low Voltage Level		VOL	IOL=2.1mA			0.4
Output Low Current(R/B)		IoL(R/B)	VOL=0.4V	8	10		mA

Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operatl,o_n of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure t LO absolute maximum rating conditions for extended periods may affect device reliability. 3 ELECTRICALCHARACTERISTICS O (Vcc = +5V, VCM = -0.2V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at TA = +250C.) (Note l)

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