| SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
| DC characteristics of any single transistor |
| V(BR)CBO | collector-base breakdown voltage | lc = 2.5 cCA; IE = 0 | 20 | | | V |
| V(BR)CEO | collector-emitter breakdown voltage | lc = 10 cCA; lB = 0 | 8 | | | V |
| V(BR)EBO | emitter-base breakdown voltage | IE = 2.5 lc = 0 | 2.5 | | | V |
| ICBO | collector-base leakage current | VCB = 6 V; IE = 0 | | | 50 | nA |
| hFE | DC current gain | lc = 5 mA; VCE = 6 V | 60 | 120 | 250 | |
| DC characteristics of the dual transistor |
| ChFE | ratio of highest and lowest DC current gain | lci = lC2 = 5 mA; VCEl = VCE2 = 6 V | 1 | 1.2 | | |
| qVBEO | difference between highest and lowest base-emitter voltage (offset voltage) | IEi = IE2 = 10 mA; Tamb = 25 IC | 0 | 1 | | mV |
| AC characteristics of any single transistor |
| fT | transition frequency | lc = 5 mA; VCE = 3 V; f= 1 GHz | | 9 | | GHz |
| Ce | collector capacitance | IE = ie = 0; VCB = 3 V; f= 1 MHz | | 0.31 | | pF |
| Cre | feedback capacitance | lc = 0; VCB = 3 V; f= 1 MHz | | 0.22 | | pF |
| GUM | maximum unilateral power gain; note 1 | lc = 5 mA; VCE = 3 V; Tamb = 25 IC; f = 900 MHz | | 17 | | dB |
| lc = 5 mA; VCE = 3 V; Tamb = 25 IC; f= 2 GHz | | 10 | | dB |
| ls2il2 | insertion power gain | lc = 5 mA; VCE = 3 V; f = 900 MHz; Tamb = 25 IC | 14 | 15 | | dB |
| F | noise figure | lc = 5 mA; VCE = 3 V; f = 900 MHz; Fs = Fopt | | 1.4 | 1.8 | dB |
| lc = 5 mA; VCE = 3 V; f= 2 GHz; Fs = Fopt | | 1.9 | | dB |
| lc = 1 rriA; VCE = 3 V; f = 900 MHz; Fs = Fopt | | 1.1 | 1.6 | dB |
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